RN1910FE,LF(CT Verðlagning (USD) [1936260stk lager]
- 1 pcs$0.01920
- 4,000 pcs$0.01910
- 8,000 pcs$0.01661
- 12,000 pcs$0.01412
- 28,000 pcs$0.01329
- 100,000 pcs$0.01107
- Hlutanúmer:
- RN1910FE,LF(CT
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Thyristors - SCRs - mát and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1910FE,LF(CT electronic components. RN1910FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1910FE,LF(CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1910FE,LF(CT Vörueiginleikar
Hlutanúmer :
RN1910FE,LF(CT
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS 2NPN PREBIAS 0.1W ES6
Röð :
-
Hluti staða :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
4.7 kOhms
Viðnám - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
Tíðni - umskipti :
250MHz
Afl - Max :
100mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-563, SOT-666
Birgir tæki pakki :
ES6
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