SQD100N04-3M6_GE3 Verðlagning (USD) [119955stk lager]
- 1 pcs$0.30834
- Hlutanúmer:
- SQD100N04-3M6_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 40V 100A TO252AA.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Thyristors - SCR, Thyristors - DIACs, SIDACs, Kerfisstjóratæki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Bríta leiðréttingar, Díóða - breytileg getu and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQD100N04-3M6_GE3 electronic components. SQD100N04-3M6_GE3 can be shipped within 24 hours after order. If you have any demands for SQD100N04-3M6_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD100N04-3M6_GE3 Vörueiginleikar
Hlutanúmer :
SQD100N04-3M6_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 40V 100A TO252AA
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
6700pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
136W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252AA
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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