[3278stk lager]
- Hlutanúmer:
- SIHB22N60S-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 650V TO263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Kerfisstjóratæki, Díóða - breytileg getu, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHB22N60S-GE3 electronic components. SIHB22N60S-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60S-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB22N60S-GE3 Vörueiginleikar
Hlutanúmer :
SIHB22N60S-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 650V TO263
Röð :
S
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
22A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 11A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2.81nF @ 25V
FET lögun :
-
Dreifing orku (Max) :
250W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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