IXTH12N70X2 Verðlagning (USD) [22107stk lager]
- 1 pcs$1.86416
- Hlutanúmer:
- IXTH12N70X2
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - Forritanleg sameining, Thyristors - SCRs - mát, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Single and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in IXYS IXTH12N70X2 electronic components. IXTH12N70X2 can be shipped within 24 hours after order. If you have any demands for IXTH12N70X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH12N70X2 Vörueiginleikar
Hlutanúmer :
IXTH12N70X2
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
700V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
960pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
180W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247
Pakki / mál :
TO-247-3
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