SIHH21N65E-T1-GE3 Verðlagning (USD) [26914stk lager]
- 1 pcs$1.53893
- 3,000 pcs$1.53127
- Hlutanúmer:
- SIHH21N65E-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 650V 20.3A PWRPAK8X8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Transistors - JFETs, Thyristors - TRIACs, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Single and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHH21N65E-T1-GE3 electronic components. SIHH21N65E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH21N65E-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHH21N65E-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIHH21N65E-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 650V 20.3A PWRPAK8X8
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 11A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
99nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2404pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
156W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 8 x 8
Pakki / mál :
8-PowerTDFN
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