[827stk lager]
- Hlutanúmer:
- DMN3112S-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 30V 5.8A SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - Arrays, Kerfisstjóratæki, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN3112S-7 electronic components. DMN3112S-7 can be shipped within 24 hours after order. If you have any demands for DMN3112S-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3112S-7 Vörueiginleikar
Hlutanúmer :
DMN3112S-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 30V 5.8A SOT23-3
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
57 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
-
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
268pF @ 5V
FET lögun :
-
Dreifing orku (Max) :
1.4W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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