BSC009NE2LSATMA1 Verðlagning (USD) [96214stk lager]
- 1 pcs$0.40639
- Hlutanúmer:
- BSC009NE2LSATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 41A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Díóða - Zener - Stakur, Thyristors - SCR, Transistors - IGBTs - Arrays, Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC009NE2LSATMA1 electronic components. BSC009NE2LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC009NE2LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC009NE2LSATMA1 Vörueiginleikar
Hlutanúmer :
BSC009NE2LSATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 41A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
41A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
126nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5800pF @ 12V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 96W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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