SQS481ENW-T1_GE3 Verðlagning (USD) [236499stk lager]
- 1 pcs$0.15640
- 3,000 pcs$0.13247
- Hlutanúmer:
- SQS481ENW-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 150V 4.7A 1212-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Arrays, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - Single, Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQS481ENW-T1_GE3 electronic components. SQS481ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS481ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS481ENW-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQS481ENW-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 150V 4.7A 1212-8
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
150V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.095 Ohm @ 5A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
385pF @ 75V
FET lögun :
-
Dreifing orku (Max) :
62.5W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8
Pakki / mál :
PowerPAK® 1212-8
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