[13433stk lager]
- Hlutanúmer:
- IRF6609TR1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 20V 31A DIRECTFET.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Transistors - JFETs, Díóða - Bríta leiðréttingar, Thyristors - DIACs, SIDACs, Transistors - Forritanleg sameining, Thyristors - SCRs - mát and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF6609TR1 electronic components. IRF6609TR1 can be shipped within 24 hours after order. If you have any demands for IRF6609TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6609TR1 Vörueiginleikar
Hlutanúmer :
IRF6609TR1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 20V 31A DIRECTFET
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
31A (Ta), 150A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2 mOhm @ 31A, 10V
Vgs (th) (Max) @ kt :
2.45V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
69nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
6290pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.8W (Ta), 89W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DIRECTFET™ MT
Pakki / mál :
DirectFET™ Isometric MT
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