SI8425DB-T1-E1 Verðlagning (USD) [367832stk lager]
- 1 pcs$0.10056
- 3,000 pcs$0.09462
- Hlutanúmer:
- SI8425DB-T1-E1
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V MICROFOOT.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Díóða - Bríta leiðréttingar, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - Forritanleg sameining and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI8425DB-T1-E1 electronic components. SI8425DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8425DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8425DB-T1-E1 Vörueiginleikar
Hlutanúmer :
SI8425DB-T1-E1
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V MICROFOOT
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ kt :
900mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (hámark) :
±10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2800pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.1W (Ta), 2.7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-WLCSP (1.6x1.6)
Pakki / mál :
4-UFBGA, WLCSP
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