Vishay Siliconix - SQJ457EP-T1_GE3

KEY Part #: K6418457

SQJ457EP-T1_GE3 Verðlagning (USD) [198900stk lager]

  • 1 pcs$0.18596
  • 3,000 pcs$0.15714

Hlutanúmer:
SQJ457EP-T1_GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET P-CH 60V 36A POWERPAKSO-8.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Vishay Siliconix SQJ457EP-T1_GE3 electronic components. SQJ457EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ457EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ457EP-T1_GE3 Vörueiginleikar

Hlutanúmer : SQJ457EP-T1_GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET P-CH 60V 36A POWERPAKSO-8
Röð : Automotive, AEC-Q101, TrenchFET®
Hluti staða : Active
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 36A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt : 2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 3400pF @ 25V
FET lögun : -
Dreifing orku (Max) : 68W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® SO-8
Pakki / mál : PowerPAK® SO-8

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