FQB4N80TM Verðlagning (USD) [102947stk lager]
- 1 pcs$0.37982
- 800 pcs$0.34882
- Hlutanúmer:
- FQB4N80TM
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- MOSFET N-CH 800V 3.9A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Díóða - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor FQB4N80TM electronic components. FQB4N80TM can be shipped within 24 hours after order. If you have any demands for FQB4N80TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB4N80TM Vörueiginleikar
Hlutanúmer :
FQB4N80TM
Framleiðandi :
ON Semiconductor
Lýsing :
MOSFET N-CH 800V 3.9A D2PAK
Röð :
QFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
880pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.13W (Ta), 130W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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