DMT10H015LSS-13 Verðlagning (USD) [174505stk lager]
- 1 pcs$0.21196
- 2,500 pcs$0.18759
- Hlutanúmer:
- DMT10H015LSS-13
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 100V 8.3A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - fylki and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMT10H015LSS-13 electronic components. DMT10H015LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT10H015LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H015LSS-13 Vörueiginleikar
Hlutanúmer :
DMT10H015LSS-13
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 100V 8.3A
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.3A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
33.3nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1871pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
1.2W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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