IPN80R1K4P7ATMA1 Verðlagning (USD) [206252stk lager]
- 1 pcs$0.17933
- 3,000 pcs$0.17688
- Hlutanúmer:
- IPN80R1K4P7ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CHANNEL 800V 4A SOT223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Díóða - Bríta leiðréttingar, Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Fylki and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPN80R1K4P7ATMA1 electronic components. IPN80R1K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R1K4P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R1K4P7ATMA1 Vörueiginleikar
Hlutanúmer :
IPN80R1K4P7ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CHANNEL 800V 4A SOT223
Röð :
CoolMOS™ P7
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 70µA
Hliðargjald (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
250pF @ 500V
FET lögun :
-
Dreifing orku (Max) :
7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223
Pakki / mál :
TO-261-3
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