IRF7473PBF Verðlagning (USD) [13764stk lager]
- 95 pcs$0.55462
- Hlutanúmer:
- IRF7473PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 6.9A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Single and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF7473PBF electronic components. IRF7473PBF can be shipped within 24 hours after order. If you have any demands for IRF7473PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7473PBF Vörueiginleikar
Hlutanúmer :
IRF7473PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 6.9A 8-SOIC
Röð :
HEXFET®
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.9A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 4.1A, 10V
Vgs (th) (Max) @ kt :
5.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
61nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3180pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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