BSC018NE2LSATMA1 Verðlagning (USD) [164965stk lager]
- 1 pcs$0.22421
- 5,000 pcs$0.21525
- Hlutanúmer:
- BSC018NE2LSATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 100A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Transistors - IGBTs - Arrays and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC018NE2LSATMA1 electronic components. BSC018NE2LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC018NE2LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC018NE2LSATMA1 Vörueiginleikar
Hlutanúmer :
BSC018NE2LSATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 100A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
29A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2800pF @ 12V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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