SI2312BDS-T1-E3 Verðlagning (USD) [529776stk lager]
- 1 pcs$0.06982
- 3,000 pcs$0.06317
- Hlutanúmer:
- SI2312BDS-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 3.9A SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Díóða - RF and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2312BDS-T1-E3 electronic components. SI2312BDS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2312BDS-T1-E3 Vörueiginleikar
Hlutanúmer :
SI2312BDS-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 3.9A SOT23-3
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.9A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
31 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ kt :
850mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
750mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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