Vishay Siliconix - SI7810DN-T1-GE3

KEY Part #: K6404811

SI7810DN-T1-GE3 Verðlagning (USD) [158886stk lager]

  • 1 pcs$0.23279
  • 3,000 pcs$0.19673

Hlutanúmer:
SI7810DN-T1-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 100V 3.4A 1212-8.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - Zener - Stakur, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Díóða - RF, Díóða - breytileg getu and Transistors - sérstök tilgangur ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SI7810DN-T1-GE3 electronic components. SI7810DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7810DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7810DN-T1-GE3 Vörueiginleikar

Hlutanúmer : SI7810DN-T1-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 100V 3.4A 1212-8
Röð : TrenchFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3.4A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 62 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ kt : 4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : -
FET lögun : -
Dreifing orku (Max) : 1.5W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® 1212-8
Pakki / mál : PowerPAK® 1212-8

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