IXFH9N80Q Verðlagning (USD) [12099stk lager]
- 1 pcs$3.76527
- 30 pcs$3.74654
- Hlutanúmer:
- IXFH9N80Q
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 800V 9A TO-247.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Single and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXFH9N80Q electronic components. IXFH9N80Q can be shipped within 24 hours after order. If you have any demands for IXFH9N80Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH9N80Q Vörueiginleikar
Hlutanúmer :
IXFH9N80Q
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 800V 9A TO-247
Röð :
HiPerFET™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
5V @ 2.5mA
Hliðargjald (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2200pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
180W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247AD (IXFH)
Pakki / mál :
TO-247-3
Nýjustu fréttir
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