Infineon Technologies - IPB60R099CPATMA1

KEY Part #: K6416960

IPB60R099CPATMA1 Verðlagning (USD) [21324stk lager]

  • 1 pcs$1.93276

Hlutanúmer:
IPB60R099CPATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 600V 31A D2PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
RoHS:
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Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Arrays, Díóða - leiðréttingar - stakir and Thyristors - SCRs - mát ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R099CPATMA1 Vörueiginleikar

Hlutanúmer : IPB60R099CPATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 600V 31A D2PAK
Röð : CoolMOS™
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 31A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 18A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 1.2mA
Hliðargjald (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2800pF @ 100V
FET lögun : -
Dreifing orku (Max) : 255W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-3-2
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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