[12496stk lager]
- Hlutanúmer:
- BSH111,215
- Framleiðandi:
- Nexperia USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 55V 335MA SOT-23.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Single and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Nexperia USA Inc. BSH111,215 electronic components. BSH111,215 can be shipped within 24 hours after order. If you have any demands for BSH111,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH111,215 Vörueiginleikar
Hlutanúmer :
BSH111,215
Framleiðandi :
Nexperia USA Inc.
Lýsing :
MOSFET N-CH 55V 335MA SOT-23
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
335mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 500mA, 4.5V
Vgs (th) (Max) @ kt :
1.3V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
1nC @ 8V
Vgs (hámark) :
±10V
Inntaksrýmd (Ciss) (Max) @ Vds :
40pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
830mW (Tc)
Vinnuhitastig :
-65°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-236AB
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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