SI2312CDS-T1-GE3 Verðlagning (USD) [545377stk lager]
- 1 pcs$0.06782
- 3,000 pcs$0.06406
- Hlutanúmer:
- SI2312CDS-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 6A SOT-23.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Transistors - IGBTs - Arrays, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2312CDS-T1-GE3 electronic components. SI2312CDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2312CDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2312CDS-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI2312CDS-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 6A SOT-23
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
31.8 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18nC @ 5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
865pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.25W (Ta), 2.1W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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