[2656stk lager]
- Hlutanúmer:
- GP2M011A090NG
- Framleiðandi:
- Global Power Technologies Group
- Nákvæm lýsing:
- MOSFET N-CH 900V 11A TO3PN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - Forritanleg sameining, Kerfisstjóratæki, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF, Díóða - Bríta leiðréttingar and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Global Power Technologies Group GP2M011A090NG electronic components. GP2M011A090NG can be shipped within 24 hours after order. If you have any demands for GP2M011A090NG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP2M011A090NG Vörueiginleikar
Hlutanúmer :
GP2M011A090NG
Framleiðandi :
Global Power Technologies Group
Lýsing :
MOSFET N-CH 900V 11A TO3PN
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
900V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
3240pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
416W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-3PN
Pakki / mál :
TO-3P-3, SC-65-3
Nýjustu fréttir
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