[3548stk lager]
- Hlutanúmer:
- PMT200EN,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 100V 1.8A SC-73.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - FETs, MOSFETs - RF, Kerfisstjóratæki, Transistors - sérstök tilgangur, Díóða - leiðréttingar - fylki, Thyristors - SCRs - mát, Thyristors - TRIACs and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PMT200EN,115 electronic components. PMT200EN,115 can be shipped within 24 hours after order. If you have any demands for PMT200EN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMT200EN,115 Vörueiginleikar
Hlutanúmer :
PMT200EN,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 100V 1.8A SC-73
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
235 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
475pF @ 80V
FET lögun :
-
Dreifing orku (Max) :
800mW (Ta), 8.3W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-223
Pakki / mál :
TO-261-4, TO-261AA
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