[1045stk lager]
- Hlutanúmer:
- IPD50R399CP
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 550V 9A TO-252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - mát, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Single and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD50R399CP electronic components. IPD50R399CP can be shipped within 24 hours after order. If you have any demands for IPD50R399CP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R399CP Vörueiginleikar
Hlutanúmer :
IPD50R399CP
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 550V 9A TO-252
Röð :
CoolMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
550V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
399 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 330µA
Hliðargjald (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
890pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
83W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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