[1096stk lager]
- Hlutanúmer:
- IRFB3307ZGPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 75V 120A TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, Thyristors - SCR, Transistors - Forritanleg sameining, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFB3307ZGPBF electronic components. IRFB3307ZGPBF can be shipped within 24 hours after order. If you have any demands for IRFB3307ZGPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB3307ZGPBF Vörueiginleikar
Hlutanúmer :
IRFB3307ZGPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 75V 120A TO-220AB
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
75V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.8 mOhm @ 75A, 10V
Vgs (th) (Max) @ kt :
4V @ 150µA
Hliðargjald (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4750pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
230W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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