[1012stk lager]
- Hlutanúmer:
- BSS119L6327HTSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 170MA SOT-23.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, Thyristors - TRIACs, Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - fylki, Transistors - Forritanleg sameining and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSS119L6327HTSA1 electronic components. BSS119L6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSS119L6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS119L6327HTSA1 Vörueiginleikar
Hlutanúmer :
BSS119L6327HTSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 170MA SOT-23
Röð :
SIPMOS®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
170mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 170mA, 10V
Vgs (th) (Max) @ kt :
2.3V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
2.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
78pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
360mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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