TPN2010FNH,L1Q Verðlagning (USD) [146815stk lager]
- 1 pcs$0.26459
- 5,000 pcs$0.26327
- Hlutanúmer:
- TPN2010FNH,L1Q
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 250V 5.6A 8TSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Thyristors - SCR, Transistors - IGBTs - Single, Kerfisstjóratæki, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TPN2010FNH,L1Q electronic components. TPN2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2010FNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2010FNH,L1Q Vörueiginleikar
Hlutanúmer :
TPN2010FNH,L1Q
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 250V 5.6A 8TSON
Röð :
U-MOSVIII-H
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
250V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.6A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ kt :
4V @ 200µA
Hliðargjald (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
600pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
700mW (Ta), 39W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-TSON Advance (3.3x3.3)
Pakki / mál :
8-PowerVDFN
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