SI3900DV-T1-GE3 Verðlagning (USD) [203660stk lager]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Hlutanúmer:
- SI3900DV-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 2A 6-TSOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Díóða - leiðréttingar - fylki, Transistors - JFETs, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Single and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI3900DV-T1-GE3 electronic components. SI3900DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3900DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3900DV-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI3900DV-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 20V 2A 6-TSOP
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2A
Rds On (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
830mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
SOT-23-6 Thin, TSOT-23-6
Birgir tæki pakki :
6-TSOP
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