IRFD110PBF Verðlagning (USD) [100560stk lager]
- 1 pcs$0.33222
- 10 pcs$0.29069
- 100 pcs$0.22437
- 500 pcs$0.16619
- 1,000 pcs$0.13295
- Hlutanúmer:
- IRFD110PBF
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 1A 4-DIP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Transistors - sérstök tilgangur, Thyristors - SCR, Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix IRFD110PBF electronic components. IRFD110PBF can be shipped within 24 hours after order. If you have any demands for IRFD110PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD110PBF Vörueiginleikar
Hlutanúmer :
IRFD110PBF
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 1A 4-DIP
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
540 mOhm @ 600mA, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
180pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
1.3W (Ta)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
4-DIP, Hexdip, HVMDIP
Pakki / mál :
4-DIP (0.300", 7.62mm)
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