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- Hlutanúmer:
- SIB419DK-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 12V 9A SC75-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Single, Díóða - Zener - Stakur, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Arrays and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIB419DK-T1-GE3 electronic components. SIB419DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB419DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB419DK-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIB419DK-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 12V 9A SC75-6
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 5.2A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11.82nC @ 5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
562pF @ 6V
FET lögun :
-
Dreifing orku (Max) :
2.45W (Ta), 13.1W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-75-6L Single
Pakki / mál :
PowerPAK® SC-75-6L
Nýjustu fréttir
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