[1050stk lager]
- Hlutanúmer:
- IPI08CN10N G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 95A TO262-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Thyristors - TRIACs, Transistors - sérstök tilgangur and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPI08CN10N G electronic components. IPI08CN10N G can be shipped within 24 hours after order. If you have any demands for IPI08CN10N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI08CN10N G Vörueiginleikar
Hlutanúmer :
IPI08CN10N G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 95A TO262-3
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
95A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.5 mOhm @ 95A, 10V
Vgs (th) (Max) @ kt :
4V @ 130µA
Hliðargjald (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
6660pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
167W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO262-3
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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