FDG312P Verðlagning (USD) [596208stk lager]
- 1 pcs$0.06235
- 3,000 pcs$0.06204
- Hlutanúmer:
- FDG312P
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- MOSFET P-CH 20V 1.2A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - leiðréttingar - fylki, Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - sérstök tilgangur and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor FDG312P electronic components. FDG312P can be shipped within 24 hours after order. If you have any demands for FDG312P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDG312P Vörueiginleikar
Hlutanúmer :
FDG312P
Framleiðandi :
ON Semiconductor
Lýsing :
MOSFET P-CH 20V 1.2A SC70-6
Röð :
PowerTrench®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
5nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
330pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
750mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SC-88 (SC-70-6)
Pakki / mál :
6-TSSOP, SC-88, SOT-363
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