[4054stk lager]
- Hlutanúmer:
- PMDPB38UNE,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 4A HUSON6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Stakur, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - RF and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PMDPB38UNE,115 electronic components. PMDPB38UNE,115 can be shipped within 24 hours after order. If you have any demands for PMDPB38UNE,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB38UNE,115 Vörueiginleikar
Hlutanúmer :
PMDPB38UNE,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET 2N-CH 20V 4A HUSON6
Röð :
-
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
46 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
268pF @ 10V
Afl - Max :
510mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-UDFN Exposed Pad
Birgir tæki pakki :
DFN2020-6
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