Infineon Technologies - IPB65R225C7ATMA2

KEY Part #: K6418579

IPB65R225C7ATMA2 Verðlagning (USD) [68818stk lager]

  • 1 pcs$0.56817

Hlutanúmer:
IPB65R225C7ATMA2
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 650V 11A TO-263-3.
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, Díóða - RF, Thyristors - SCRs - mát, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Transistors - Tvíhverfur (BJT) - RF ...
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We specialize in Infineon Technologies IPB65R225C7ATMA2 electronic components. IPB65R225C7ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB65R225C7ATMA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R225C7ATMA2 Vörueiginleikar

Hlutanúmer : IPB65R225C7ATMA2
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 650V 11A TO-263-3
Röð : CoolMOS™ C7
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 11A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 225 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ kt : 4V @ 240µA
Hliðargjald (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 996pF @ 400V
FET lögun : -
Dreifing orku (Max) : 63W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-3
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB