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- Hlutanúmer:
- IRF8910GPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 10A 8-SO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Arrays, Díóða - RF, Transistors - FETs, MOSFETs - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - breytileg getu, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF8910GPBF electronic components. IRF8910GPBF can be shipped within 24 hours after order. If you have any demands for IRF8910GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8910GPBF Vörueiginleikar
Hlutanúmer :
IRF8910GPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 20V 10A 8-SO
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A
Rds On (Max) @ Id, Vgs :
13.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.55V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
960pF @ 10V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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