SISS23DN-T1-GE3 Verðlagning (USD) [252282stk lager]
- 1 pcs$0.14661
- 3,000 pcs$0.13796
- Hlutanúmer:
- SISS23DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V 50A PPAK 1212-8S.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Díóða - breytileg getu, Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISS23DN-T1-GE3 electronic components. SISS23DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS23DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS23DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISS23DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V 50A PPAK 1212-8S
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
50A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ kt :
900mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
8840pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
4.8W (Ta), 57W (Tc)
Vinnuhitastig :
-50°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S (3.3x3.3)
Pakki / mál :
8-PowerVDFN
Nýjustu fréttir
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