BSO612CVGHUMA1 Verðlagning (USD) [210131stk lager]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Hlutanúmer:
- BSO612CVGHUMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - Arrays, Transistors - sérstök tilgangur, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Vörueiginleikar
Hlutanúmer :
BSO612CVGHUMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N/P-CH 60V 2A 8-SOIC
Röð :
SIPMOS®
Hluti staða :
Active
FET gerð :
N and P-Channel
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3A, 2A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (th) (Max) @ kt :
4V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs :
15.5nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
340pF @ 25V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
PG-DSO-8
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