SIA929DJ-T1-GE3 Verðlagning (USD) [340585stk lager]
- 1 pcs$0.10860
- 3,000 pcs$0.10219
- Hlutanúmer:
- SIA929DJ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2P-CH 30V 4.5A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF, Díóða - Zener - Stakur, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - mát and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA929DJ-T1-GE3 electronic components. SIA929DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA929DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA929DJ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA929DJ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2P-CH 30V 4.5A SC70-6
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 P-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.5A (Tc)
Rds On (Max) @ Id, Vgs :
64 mOhm @ 3A, 10V
Vgs (th) (Max) @ kt :
1.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
21nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
575pF @ 15V
Afl - Max :
7.8W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SC-70-6 Dual
Birgir tæki pakki :
PowerPAK® SC-70-6 Dual
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