PMFPB8032XP,115 Verðlagning (USD) [316806stk lager]
- 1 pcs$0.11675
- 3,000 pcs$0.10093
- Hlutanúmer:
- PMFPB8032XP,115
- Framleiðandi:
- Nexperia USA Inc.
- Nákvæm lýsing:
- MOSFET P-CH 20V 2.7A HUSON6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF, Díóða - Bríta leiðréttingar, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Nexperia USA Inc. PMFPB8032XP,115 electronic components. PMFPB8032XP,115 can be shipped within 24 hours after order. If you have any demands for PMFPB8032XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMFPB8032XP,115 Vörueiginleikar
Hlutanúmer :
PMFPB8032XP,115
Framleiðandi :
Nexperia USA Inc.
Lýsing :
MOSFET P-CH 20V 2.7A HUSON6
Röð :
-
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
102 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
550pF @ 10V
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
485mW (Ta), 6.25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-HUSON-EP (2x2)
Pakki / mál :
6-UDFN Exposed Pad
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