Infineon Technologies - IPB80N06S2L11ATMA2

KEY Part #: K6419785

IPB80N06S2L11ATMA2 Verðlagning (USD) [132058stk lager]

  • 1 pcs$0.28009
  • 1,000 pcs$0.26677

Hlutanúmer:
IPB80N06S2L11ATMA2
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 55V 80A TO263-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Single, Transistors - Forritanleg sameining, Díóða - RF and Díóða - leiðréttingar - fylki ...
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We specialize in Infineon Technologies IPB80N06S2L11ATMA2 electronic components. IPB80N06S2L11ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB80N06S2L11ATMA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N06S2L11ATMA2 Vörueiginleikar

Hlutanúmer : IPB80N06S2L11ATMA2
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 55V 80A TO263-3
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.7 mOhm @ 40A, 10V
Vgs (th) (Max) @ kt : 2V @ 93µA
Hliðargjald (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2075pF @ 25V
FET lögun : -
Dreifing orku (Max) : 158W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-3-2
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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