Infineon Technologies - IPP05N03LB G

KEY Part #: K6409836

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    Hlutanúmer:
    IPP05N03LB G
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 30V 80A TO-220.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Flís frá:
    Hong Kong
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    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - IGBTs - Single, Kerfisstjóratæki, Díóða - leiðréttingar - stakir, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - mát ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPP05N03LB G electronic components. IPP05N03LB G can be shipped within 24 hours after order. If you have any demands for IPP05N03LB G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP05N03LB G Vörueiginleikar

    Hlutanúmer : IPP05N03LB G
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 30V 80A TO-220
    Röð : OptiMOS™
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 30V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 5.3 mOhm @ 60A, 10V
    Vgs (th) (Max) @ kt : 2V @ 40µA
    Hliðargjald (Qg) (Max) @ Vgs : 25nC @ 5V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 3209pF @ 15V
    FET lögun : -
    Dreifing orku (Max) : 94W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Through Hole
    Birgir tæki pakki : PG-TO220-3-1
    Pakki / mál : TO-220-3

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