BSC123N10LSGATMA1 Verðlagning (USD) [116263stk lager]
- 1 pcs$0.31813
- 5,000 pcs$0.30546
- Hlutanúmer:
- BSC123N10LSGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 71A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Kerfisstjóratæki and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC123N10LSGATMA1 electronic components. BSC123N10LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC123N10LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC123N10LSGATMA1 Vörueiginleikar
Hlutanúmer :
BSC123N10LSGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 71A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10.6A (Ta), 71A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 72µA
Hliðargjald (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4900pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
114W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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