[163stk lager]
- Hlutanúmer:
- IPSH4N03LA G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 90A IPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Díóða - leiðréttingar - fylki and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPSH4N03LA G electronic components. IPSH4N03LA G can be shipped within 24 hours after order. If you have any demands for IPSH4N03LA G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPSH4N03LA G Vörueiginleikar
Hlutanúmer :
IPSH4N03LA G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 90A IPAK
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
90A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.4 mOhm @ 60A, 10V
Vgs (th) (Max) @ kt :
2V @ 40µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3200pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
94W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO251-3
Pakki / mál :
TO-251-3 Stub Leads, IPak
Nýjustu fréttir
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