SI4158DY-T1-GE3 Verðlagning (USD) [1420stk lager]
- 2,500 pcs$0.28626
- Hlutanúmer:
- SI4158DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 36.5A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - leiðréttingar - stakir, Díóða - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Arrays and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4158DY-T1-GE3 electronic components. SI4158DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4158DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4158DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4158DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 36.5A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
36.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
5710pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
3W (Ta), 6W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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