[12592stk lager]
- Hlutanúmer:
- IRF9Z24NS
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET P-CH 55V 12A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - JFETs and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF9Z24NS electronic components. IRF9Z24NS can be shipped within 24 hours after order. If you have any demands for IRF9Z24NS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z24NS Vörueiginleikar
Hlutanúmer :
IRF9Z24NS
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET P-CH 55V 12A D2PAK
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
175 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
350pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.8W (Ta), 45W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D2PAK
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nýjustu fréttir
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