IPB017N10N5ATMA1 Verðlagning (USD) [25373stk lager]
- 1 pcs$1.76201
- 1,000 pcs$1.75325
- Hlutanúmer:
- IPB017N10N5ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 180A D2PAK-7.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - Arrays and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB017N10N5ATMA1 electronic components. IPB017N10N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB017N10N5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB017N10N5ATMA1 Vörueiginleikar
Hlutanúmer :
IPB017N10N5ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 180A D2PAK-7
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
180A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 279µA
Hliðargjald (Qg) (Max) @ Vgs :
210nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
15600pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
375W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-7
Pakki / mál :
TO-263-7, D²Pak (6 Leads + Tab)
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