SIRC10DP-T1-GE3 Verðlagning (USD) [240506stk lager]
- 1 pcs$0.15456
- 3,000 pcs$0.15379
- Hlutanúmer:
- SIRC10DP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 30V 60A POWERPAKSO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - RF, Díóða - breytileg getu, Thyristors - SCR, Díóða - Zener - Stakur and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIRC10DP-T1-GE3 electronic components. SIRC10DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRC10DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRC10DP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIRC10DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 30V 60A POWERPAKSO-8
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (hámark) :
+20V, -16V
Inntaksrýmd (Ciss) (Max) @ Vds :
1873pF @ 15V
FET lögun :
Schottky Diode (Body)
Dreifing orku (Max) :
43W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
Nýjustu fréttir
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