[12927stk lager]
- Hlutanúmer:
- BSP296E6327
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 1.1A SOT223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Díóða - RF, Transistors - IGBTs - Single, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSP296E6327 electronic components. BSP296E6327 can be shipped within 24 hours after order. If you have any demands for BSP296E6327, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP296E6327 Vörueiginleikar
Hlutanúmer :
BSP296E6327
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 1.1A SOT223
Röð :
SIPMOS®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.1A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
700 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ kt :
1.8V @ 400µA
Hliðargjald (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
364pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
1.79W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223-4
Pakki / mál :
TO-261-4, TO-261AA
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