[3949stk lager]
- Hlutanúmer:
- SI4910DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 40V 7.6A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - RF and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4910DY-T1-GE3 electronic components. SI4910DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4910DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4910DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4910DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 40V 7.6A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7.6A
Rds On (Max) @ Id, Vgs :
27 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
855pF @ 20V
Afl - Max :
3.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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